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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Crystallization behavior, densification and microwave dielectric properties of MgO-Al2O3-SiO2-TiO2 system glass-ceramics containing V2O5
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Crystallization behavior, densification and microwave dielectric properties of MgO-Al2O3-SiO2-TiO2 system glass-ceramics containing V2O5

机译:MgO-Al2O3-SiO2-TiO2系统玻璃陶瓷致密化行为,致密化和微波介电性能V2O5

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摘要

Glass-ceramics with a mass fraction composition (wt%) of 19MgO center dot 23Al(2)O(3)-53SiO(2)center dot 4TiO(2)-xV(2)O(5) (x = 2.5, 3 and 3.5, abbreviated as samples V2.5, V3 and V3.5) were prepared by two-step heat treatment of the parent glass at selected nucleation and crystallization temperatures for different holding time (2 h and 20 h), respectively. The effects of V2O5 on crystalline phases, microstructures and microwave dielectric properties of the glass-ceramics were investigated in detail. X-ray diffraction (XRD) analyses revealed that the main phases could be identified as alpha-cordierite and SiO2 phases, and also some amount of-cordierite phase and a trace of Al2Si4O10, Mg(VO4)(2) and TiO2 phases were also detected in all these glass-ceramics' XRD patterns. In addition, an appropriate V2O5 addition with 3.0-3.5 wt% was found to cause an increase in the content of the precipitated crystalline phases. Based on the EDM observation, a fraction of Ti4+ and V5+ ions were remained in the residual glass matrix of the crystallized specimens. Additionally, the microwave dielectric properties were closely depended on not only the different two-step heat treatment temperatures and holding time, but also the relative densities and degree of crystallization of the glass matrix. Wherein, the fully densified V3 glass-ceramic sample heat-treated at 850 degrees C/2 h + 950 degrees C/20 h exhibited a lower dielectric constant (60 of 3.79, a higher quality factor (Q x f) of about 12,520 GHz (at 13.693 GHz) and a near-zero temperature coefficient of resonant frequency (rf) of 5.4 ppm/ degrees C, which provided a promising candidate for LTCC applications.
机译:玻璃陶瓷,质量分数组合物(WT%)19MGO中心点23Al(2)O(3)-53SIO(2)中心点4TiO(2)-XV(2)O(5)(x = 2.5,3通过在所选成核和结晶温度下的母体玻璃分别用于不同保持时间(2小时和20小时),通过两步热处理制备3.5,缩写为样品V2.5,V3和V3.5)。研究了V2O5对玻璃陶瓷的结晶相,微观结构和微波介电性能的影响。 X射线衍射(XRD)分析显示,主要相可以鉴定为α-堇青石和SiO 2相,以及一些堇青石相和痕量的Al 2 Si 4 O 10,Mg(Vo4)(2)和TiO 2阶段也是在所有这些玻璃陶瓷的XRD图案中检测到。另外,发现具有3.0-3.5wt%的适当的V2O5加入,导致沉淀结晶相的含量增加。基于EDM观察,在结晶标本的残余玻璃基质中保持一小部分Ti4 +和V5 +离子。另外,微波介电性能不仅依赖于不同的两步热处理温度和保持时间,而且还密切依赖于玻璃基质的相对密度和结晶度。其中,在850℃/ 2h + 950摄氏度C / 20 h处热处理的完全致密化的V3玻璃陶瓷样品表现出较低介电常数(3.79的60,质量更高的因子(Q XF)约为12,520GHz(在13.693GHz)和5.4 ppm /℃的谐振频率(RF)的接近零温度系数,为LTCC应用提供了有希望的候选者。

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