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首页> 外文期刊>Surface & Coatings Technology >Titanium and titanium nitride thin films grown by dc reactive magnetron sputtering Physical Vapor Deposition in a continuous mode on stainless steel wires: Chemical, morphological and structural investigations
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Titanium and titanium nitride thin films grown by dc reactive magnetron sputtering Physical Vapor Deposition in a continuous mode on stainless steel wires: Chemical, morphological and structural investigations

机译:通过DC反应磁控溅射物理气相沉积在不锈钢线上的连续模式下,钛和氮化钛薄膜在不锈钢线上的连续方式:化学,形态学和结构研究

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摘要

Ti and TiN thin films (50-140 nm thick) are grown by dc reactive magnetron sputtering PVD in an inverted cylindrical magnetron (ICM) thanks to an original industrial process corresponding to a continuous reactive deposition on moving stainless steel wires. Thin films are fully characterized by X-ray Photoelectron Spectroscopy, Transmission Electron Microscopy coupled with Energy Dispersive Spectroscopy and Orientation Phase Mapping. The stoichiometry of TiN is adjusted thanks to N-2 flow. At the beginning of poisoned mode, golden stoichiometric TiN thin films are obtained. In the metallic mode, greyish TiN, films are grown whereas at higher N-2 flow, TiNxOy films are synthetized with preferential O incorporation instead of N enrichment Grain orientation maps reveal that Ti and TiN thin films are highly polycrystalline: Ti films have an equiaxis morphology whereas TiN thin films have a tendency to present < 111 > columnar grains with < 001 > oriented grains at the nucleation step. Finally, a low temperature of growth (of about 350 degrees C and <650 degrees C) is needed in order to prevent chemical diffusion from the stainless steel substrate into the rich-titanium films. (C) 2017 Elsevier B.V. All rights reserved.
机译:的Ti和TiN薄膜(厚50-140纳米)通过直流磁控溅射PVD以倒置的圆筒形磁控管(ICM)由于对应于连续反应沉积上移动的不锈钢丝的原始工业工艺生长。薄膜被完全表征通过X射线光电子能谱法,透射电子显微镜加上能量色散谱和取向相映射。锡的化学计量调整由于N-2流。在中毒模式的开始,得到金色的TiN化学计量薄膜。在金属模式中,灰色的TiN,薄膜生长而在较高N-2流,包含TiNxOy膜具有优先ö掺入synthetized代替N富集晶粒取向图表明的Ti和TiN薄膜是高度多晶:Ti膜具有equiaxis形态而氮化钛薄膜具有一种倾向,本<111>柱状晶粒与<001>在成核步骤取向的晶粒。最后,需要为了防止从不锈钢衬底化学扩散到富钛膜生长的低温下(约350℃和<650摄氏度)。 (c)2017年Elsevier B.V.保留所有权利。

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