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首页> 外文期刊>The Journal of Chemical Physics >Solvation at metal/water interfaces: An ab initio molecular dynamics benchmark of common computational approaches
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Solvation at metal/water interfaces: An ab initio molecular dynamics benchmark of common computational approaches

机译:金属/水界面的溶剂化:AB Initio Common Common Compulary Compicrics基准的共同计算方法

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Determining the influence of the solvent on electrochemical reaction energetics is a central challenge in our understanding of electrochemical interfaces. To date, it is unclear how well existing methods predict solvation energies at solid/liquid interfaces, since they cannot be assessed experimentally. Ab initio molecular dynamics (AIMD) simulations present a physically highly accurate, but also a very costly approach. In this work, we employ extensive AIMD simulations to benchmark solvation at charge-neutral metal/water interfaces against commonly applied continuum solvent models. We consider a variety of adsorbates including (CO)-C-*, (CHO)-C-*, (COH)-C-*, (OCCHO)-O-*, (OH)-O-*, and (OOH)-O-* on Cu, Au, and Pt facets solvated by water. The surfaces and adsorbates considered are relevant, among other reactions, to electrochemical CO2 reduction and the oxygen redox reactions. We determine directional hydrogen bonds and steric water competition to be critical for a correct description of solvation at the metal/water interfaces. As a consequence, we find that the most frequently applied continuum solvation methods, which do not yet capture these properties, do not presently provide more accurate energetics over simulations in vacuum. We find most of the computed benchmark solvation energies to linearly scale with hydrogen bonding or competitive water adsorption, which strongly differ across surfaces. Thus, we determine solvation energies of adsorbates to be non-transferable between metal surfaces, in contrast to standard practice.
机译:确定溶剂对电化学反应能量的影响是我们对电化学界面的理解中的中心挑战。迄今为止,目前还不清楚现有方法如何在实验中预测固体/液体界面的溶剂化能量,因为它们无法通过实验评估。 AB Initio分子动力学(AIMD)模拟存在物理上高精度,但也具有非常昂贵的方法。在这项工作中,我们采用了广泛的AIMD模拟,以对抗常用连续溶剂模型的电荷中性金属/水界面的基准溶剂。我们考虑各种吸附物,包括(CO)-C- *,(CHO)-C- *,(COH)-C- *,(OCCHO)-O- *,(OH)-O- *,和(OOH ) - 用水溶解的Cu,Au和Pt刻面。所考虑的表面和吸附物在其他反应中是相关的电化学CO2还原和氧氧化还原反应。我们确定定向氢键和空间水竞争对于在金属/水界面的溶剂化描述中至关重要。因此,我们发现,最常见的连续溶解方法,尚未捕获这些属性,目前没有在真空中的模拟上提供更准确的能量。我们发现大部分计算的基准溶剂溶剂能量与氢键或竞争水吸附线性刻度,这在表面上强烈不同。因此,与标准实践相比,我们确定吸附剂的溶剂化能量在金属表面之间不可转移。

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