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首页> 外文期刊>The Journal of Chemical Physics >Crossover from hopping to band-like transport in crystalline organic semiconductors: The effect of shallow traps
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Crossover from hopping to band-like transport in crystalline organic semiconductors: The effect of shallow traps

机译:从跳跃到晶体有机半导体中的带状传输的交叉:浅陷阱的效果

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摘要

We show a crossover from coherent to incoherent behavior of charge transport in crystalline organic semiconductors by considering the effect of shallow traps within the dynamical disorder model. The mixed quantum-classical system is treated by the Ehrenfest dynamics method complementing with instantaneous decoherence corrections and energy relaxation, which has been shown to properly make the system close to equilibrium. The shallow traps, which are incorporated by a static diagonal disorder, are shown to play a central role in the crossover. Temperature dependence of charge-carrier mobility is shown to be changed from being negative to positive with the strength of shallow traps increasing, which implies that there is a crossover from hopping to band-like transport. A higher electric field helps to recover the charge-carrier band-like transport behavior from the trapscaused hopping transport. In this way, a unified physical picture of the charge transport in crystalline organic semiconductors is proposed. Published under license by AIP Publishing.
机译:通过考虑动态紊乱模型内的浅陷阱的效果,我们展示了从结晶有机半导体中电荷传输的电荷传输的非连贯行为的交叉。混合量子古典系统由辅助瞬时变形校正和能量松弛的互动动力学方法处理,这已经显示出适当地使系统接近均衡。通过静态对角线障碍并入的浅陷阱被示出在交叉中发挥着核心作用。电荷载流子迁移率的温度依赖性被认为是由于浅陷阱的强度而变为正为正,这意味着跳跃到带状运输的交叉。较高的电场有助于从捕获的跳跃运输中恢复充电载带状的传送行为。以这种方式,提出了晶体有机半导体中电荷传输的统一物理图像。通过AIP发布在许可证下发布。

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