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首页> 外文期刊>The Journal of Chemical Physics >Formation of H-2 on graphene using Eley-Rideal and Langmuir-Hinshelwood processes
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Formation of H-2 on graphene using Eley-Rideal and Langmuir-Hinshelwood processes

机译:使用Eley-inteal和Langmuir-Hinshelwood工艺在石墨烯上形成H-2

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A hydrogen atom can either physisorb or chemisorb onto a graphene surface. To describe the interaction of H with graphene, we trained the C-C, H-H, and C-H interactions of the ReaxFF CHO bond order potential to reproduce Density Functional Theory (DFT) generated values of graphene cohesive energy and lattice constant, H-2 dissociation energy, H on graphene adsorption potentials, and H-2 formation on graphene using the Eley-Rideal (ER) and Langmuir-Hinshelwood (LH) processes. The results, generated from the trained H-graphene potentials, are in close agreement with the corresponding results from DFT. The advantage of using optimized CH potentials is, for example, the inclusion of physisorption interactions and quantum mechanical features of chemical bonding in the functional forms of the potentials. The trained CH potentials are utilized to study the energetics of formation of an H-2 molecule on graphene using the Eley-Rideal and Langmuir-Hinshelwood processes. Potential energy surfaces for the formation of H-2 through ER are generated for the collinear and oblique approach of the second hydrogen atom. Energetics of the formation of H-2 through LH is studied for a variety of cases such as when hydrogen atoms are chemisorbed or physisorbed and when hydrogen occupies ortho, meta, or para chemisorption sites. The likelihood of H-2 formation through LH for various configurations is discussed. Furthermore, the tunneling probability of an atom through a continuous symmetric/asymmetric barrier is calculated and applied to an adsorbed hydrogen atom on graphene. Published by AIP Publishing.
机译:氢原子可以将其理解或化学粘附到石墨烯表面上。为了描述H与石墨烯的相互作用,我们培训了Reaxff Cho键押韵电位的CC,HH和CH相互作用以再现密度泛函理论(DFT)产生的石墨烯粘性能量和晶格常数,H-2解离能量, H在石墨烯吸附电位和石墨烯中的H-2形成使用Eley-rideal(ER)和Langmuir-Hinshelwood(LH)方法。从训练有素的H-石墨烯电位产生的结果与DFT的相应结果密切一致。使用优化的CH电位的优点是例如包含在电势的功能形式中的化学键合的理由相互作用和量子机械特征。训练有素的CH电位用于使用Eley-Rideal和Langmuir-Hinshelwood工艺研究石墨烯上形成H-2分子的能量。为第二氢原子的共线和倾斜方法产生用于形成H-2至ER的潜在能量表面。研究了H-2至LH的形成的能量学,诸如诸如氢原子的氢原子和物吸收时,当氢占用邻奥尔族,Meta或Para化学吸附位点时。讨论了通过LH对各种配置的H-2形成的可能性。此外,计算通过连续对称/不对称屏障的原子的隧道概率并施加到石墨烯上的吸附氢原子。通过AIP发布发布。

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