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Effect of parallel magnetic field on repetitively unipolar nanosecond pulsed dielectric barrier discharge under different pulse repetition frequencies

机译:并联磁场对不同脉冲重复频率的重复单极纳秒脉冲介质阻挡放电的影响

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摘要

A magnetic field, with the direction parallel to the electric field, is applied to the repetitively unipolar positive nanosecond pulsed dielectric barrier discharge. The effect of the parallel magnetic field on the plasma generated between two parallel-plate electrodes in quiescent air is experimentally studied under different pulse repetition frequencies (PRFs). It is indicated that only the current pulse in the rising front of the voltage pulse occurs, and the value of the current is increased by the parallel magnetic field under different PRFs. The discharge uniformity is improved with the decrease in PRF, and this phenomenon is also observed in the discharge with the parallel magnetic field. By using the line-ratio technique of optical emission spectra, it is found that the average electron density and electron temperature under the considered PRFs are both increased when the parallel magnetic field is applied. The incremental degree of average electron density is basically the same under the considered PRFs, while the incremental degree of electron temperature under the higher-PRFs is larger than that under the lower-PRFs. All the above phenomena are explained by the effect of parallel magnetic field on diffusion and dissipation of electrons. Published by AIP Publishing.
机译:具有与电场平行的方向的磁场应用于重复的单极正纳秒脉冲介电阻挡放电。在不同的脉冲重复频率(PRF)下,通过实验研究并行磁场对两个平行板电极之间产生的等离子体的影响。表示仅发生电压脉冲的上升前的电流脉冲,并且通过不同PRF下的并联磁场增加电流的值。随着PRF的降低,放电均匀性得到改善,并且在具有平行磁场的放电中也观察到这种现象。通过使用光发射光谱的线路比率技术,发现当施加平行磁场时,所考虑的PRF下的平均电子密度和电子温度均增加。在所考虑的PRF下,平均电密度的增量度基本相同,而高PRF下的电子温度的增量程度大于下PRF下的电气温度。通过平行磁场对电子的扩散和耗散的影响来解释所有上述现象。通过AIP发布发布。

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  • 来源
    《Physics of plasmas》 |2018年第3期|共9页
  • 作者单位

    Dalian Univ Technol Key Lab Mat Modificat Laser Ion &

    Electron Beams Minist Educ Dalian 116024 Peoples R China;

    Dalian Univ Technol Key Lab Mat Modificat Laser Ion &

    Electron Beams Minist Educ Dalian 116024 Peoples R China;

    Dalian Univ Technol Key Lab Mat Modificat Laser Ion &

    Electron Beams Minist Educ Dalian 116024 Peoples R China;

    Dalian Univ Technol Key Lab Mat Modificat Laser Ion &

    Electron Beams Minist Educ Dalian 116024 Peoples R China;

    Dalian Univ Technol Key Lab Mat Modificat Laser Ion &

    Electron Beams Minist Educ Dalian 116024 Peoples R China;

    Air Force Engn Univ Engn Coll Xian 710038 Shaanxi Peoples R China;

    Dalian Univ Technol Key Lab Mat Modificat Laser Ion &

    Electron Beams Minist Educ Dalian 116024 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 等离子体物理学;
  • 关键词

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