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首页> 外文期刊>Nano letters >Proximity Spin-Orbit Torque on a Two-Dimensional Magnet within van der Waals Heterostructure: Current-Driven Antiferromagnet-to-Ferromagnet Reversible Nonequilibrium Phase Transition in Bilayer CrI3
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Proximity Spin-Orbit Torque on a Two-Dimensional Magnet within van der Waals Heterostructure: Current-Driven Antiferromagnet-to-Ferromagnet Reversible Nonequilibrium Phase Transition in Bilayer CrI3

机译:在Van der Waals内的二维磁体上的接近旋转轨道扭矩异质结构:双层CRI3中的电流驱动的反霉菌到铁磁性可逆非Quibibrium阶段过渡

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摘要

The recently discovered two-dimensional magnetic insulator CrI3 is an intriguing case for basic research and spintronic applications since it is a ferromagnet in the bulk but an antiferromagnet in bilayer form, with its magnetic ordering amenable to external manipulations. Using the first-principles quantum transport approach, we predict that injecting unpolarized charge current parallel to the interface of the bilayer-CrI3/monolayer-TaSe2 van der Waals (vdW) heterostructure will induce spin- orbit torque and thereby drive the dynamics of magnetization on the first monolayer of CrI3 in direct contact with TaSe2. By combining the calculated complex angular dependence of spin-orbit torque with the Landau-Lifshitz-Gilbert equation for classical dynamics of magnetization, we demonstrate that current pulses can switch the direction of magnetization on the first monolayer to become parallel to that of the second monolayer, thereby converting CrI3 from antiferromagnet to ferromagnet while not requiring any external magnetic field. We explain the mechanism of this reversible current-driven nonequilibrium phase transition by showing that first monolayer of CrI3 carries current due to evanescent wave functions injected by metallic transition metal dichalcogenide TaSe2, while concurrently acquiring strong spin-orbit coupling via such a proximity effect, whereas the second monolayer of CrI3 remains insulating. The transition can be detected by passing vertical read current through the vdW heterostructure, encapsulated by a bilayer of hexagonal boron nitride and sandwiched between graphite electrodes, where we find a tunneling magnetoresistance of similar or equal to 240%.
机译:最近发现的二维磁绝缘体CRI3是基本研究和旋转式应用的有趣案例,因为它是散装中的铁磁性,而是双层形式的反霉素,其磁性有序适用于外部操纵。使用第一原理量子传输方法,我们预测,与双层-CRI3 /单层 - 铲板(VDW)异质结构平行的不偏振的充电电流注入平行的界面,将诱导旋转轨道扭矩,从而驱动磁化的动态CRI3的第一个单层与酪壳直接接触。通过将旋转轨道扭矩的计算的复杂角度依赖性与磁化的经典动力学的Landau-Lifshitz-Gilbert方程组合,我们证明电流脉冲可以切换第一单层的磁化方向,以与第二单层的平行于平行从而将CRI3从反霉素转换为铁磁性,同时不需要任何外部磁场。我们通过显示由于金属过渡金属二甲基Aide22的渐逝波函数引起的CRI3的第一单层携带电流来解释该可逆电流驱动的非识别阶段过渡的机理。同时通过这种接近效果同时获取强旋转轨道耦合的渐逝波函数,而CRI3引起的CRI3的第二个单层仍然是绝缘。通过通过VDW异质结构通过垂直读取电流可以检测到过渡,通过六边形氮化硼的双层包封并在石墨电极之间夹在石墨电极之间,在那里我们发现相似或等于240%的隧道磁阻。

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