High-quality spin-on glass-based oxide as a matrix for embedding HfO _2 nanoparticles for metal-oxide-semiconductor capacitors

摘要

By using a low cost, simple, and reproducible spin-coating method, thin films of SOG (spin-on-glass)-based oxides with electrical characteristics resembling those of a dry thermal oxide have been obtained. The superior electrical characteristics of Metal-Oxide-Semiconductor (MOS) capacitors based on SOG-oxides come from both (1) reducing the organic content of the SOG solutions after dilution with deionized water and (2) passivation of the silicon surface by a thin chemical oxide. Fourier transform infrared spectroscopy analysis shows that the organic content in H _2O-diluted SOG-oxides is reduced compared to undiluted SOG after N _2 annealing. In addition, by chemically embedding HfO _2 nanoparticles (np-HfO _2) to these SOG-based oxides, an effective increase in the accumulation capacitance of MOS capacitors is observed and this is related to the increase in the final dielectric constant of the resulting oxide after annealing so that potential use of SOG as a glass matrix for embedding HfO 2 nanoparticles and produce higher-k oxide materials is demonstrated.