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Microstructural and corrosion characteristics of tantalum coatings prepared by molten salt electrodeposition

机译:熔融盐电沉积制备钽涂层的组织和腐蚀特性

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摘要

A study has been conducted on the electrodeposition of tantalumin a 61 mol% LiF-39 mol% NaFmelt containing 1 mol% K_2TaF_7 at 800 °C. Tantalumwas coated onto a stainless-steel base (SUS316L) by molten salt electrodeposition (MSE) at different current densities (0.5, 1.5, 2, 5, 10, 20 mA/cm~2). Electrodeposition of metallic tantalum occurred primarily by electroreduction of Ta(V), i.e. TaF_7~(2-), at a potential of b-0.27 V (vs. Pt used as a pseudo reference electrode). At potentials less than -0.324 V, TaF_2(s) also underwent reduction to metallic tantalum. Pure metallic tantalum, without any entrapped salt,was successfully deposited on SUS316L by electrodeposition at 5 mA/cm~2. This showed that the deposition efficiency and microstructure of the tantalum coating layer were strongly dependent on the current density. The densest microstructure was obtained at a current density of 5 mA/cm~2. Current densities above 5 mA/cm~2 caused non-uniformmicrostructures because of rapid deposition. A dense microstructure and an intact coating layer contributed to a significant enhancement in corrosion resistance.
机译:已经对在800℃下电沉积含1 mol%K_2TaF_7的61 mol%LiF-39 mol%NaFmelt钽的电沉积进行了研究。通过熔融盐电沉积(MSE)以不同的电流密度(0.5、1.5、2、5、10、20 mA / cm〜2)将钽涂覆在不锈钢基底(SUS316L)上。金属钽的电沉积主要是通过在电势为b-0.27 V(相对于用作伪参比电极的Pt)下电还原Ta(V),即TaF_7〜(2-)进行的。在小于-0.324 V的电位下,TaF_2也还原为金属钽。通过以5 mA / cm〜2的电沉积成功地将纯金属钽(不含任何截留的盐)沉积在SUS316L上。这表明钽涂层的沉积效率和微观结构在很大程度上取决于电流密度。在5 mA / cm〜2的电流密度下获得了最致密的微观结构。 5 mA / cm〜2以上的电流密度由于快速沉积而导致微观结构不均匀。致密的微观结构和完整的涂层有助于显着提高耐腐蚀性。

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