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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Carbon/Silicon Heterojunction Formed by Inserting Carbon Nanotubes into Silicon Nanotubes: Molecular Dynamics Simulations
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Carbon/Silicon Heterojunction Formed by Inserting Carbon Nanotubes into Silicon Nanotubes: Molecular Dynamics Simulations

机译:通过将碳纳米管插入硅纳米管中形成的碳/硅异质结:分子动力学模拟

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摘要

Using molecular dynamics (MD) simulations, we report a carbon/ silicon (C/Si) heterojunction formed by inserting carbon nanotubes (CNTs) into silicon nanotubes (SiNTs). Due to the weak mechanical property of the SiNTs, insertion of CNTs into them can not only reinforce their mechanical stabilities but also form multiwalled C/Si nanotube heterojunctions. The driving force of the coaxial assembly is primarily the intertube van der Waals (vdW) interactions. The coaxial self-assembly process is strongly tube size dependent, and the intertube distance (Ad) for a successful assembly between the two type nanotubes is around 3.5 A. Simulations suggest possible bottom-up self-assembly routes for fabrication of novel nanomachines and nanodevices in nanomechanical systems. This study also suggests that the possibility of synthesizing SiNTs with fewer walls, even single-walled SiNT in aid of CNTs.
机译:使用分子动力学(MD)模拟,我们报告了通过将碳纳米管(CNT)插入硅纳米管(SiNT)中形成的碳/硅(C / Si)异质结。由于SiNTs的机械性能较弱,将CNT插入其中不仅可以增强其机械稳定性,而且可以形成多壁C / Si纳米管异质结。同轴组件的驱动力主要是管间范德华(vdW)相互作用。同轴自组装过程在很大程度上取决于管的尺寸,两种类型的纳米管之间成功组装的管间距离(Ad)为3.5A。在纳米机械系统中。这项研究还表明,有可能利用碳纳米管合成壁数更少的SiNT,甚至是单壁SiNT。

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