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首页> 外文期刊>The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory >Analysis of the Gas Phase Kinetics Active during GaN Deposition from NH3 and Ga(CH3)(3)
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Analysis of the Gas Phase Kinetics Active during GaN Deposition from NH3 and Ga(CH3)(3)

机译:从NH3和Ga(CH3)(3)进行GaN沉积过程中气相动力学的分析

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The results of a systematic investigation aimed at determining the dominant gas phase chemistry active during GaN MOVPE are reported and discussed in this work. This study was performed developing a thermodynamic database including the most stable GaN gas phase species and a gas phase mechanism that could efficiently describe their interconversion kinetics. The thermodynamic data and the kinetic mechanism were calculated combining density functional theory and ab initio simulations. Structures and vibrational frequencies of reactants and transition states were determined at the M062X/6-311+G(d,p) level, while energies were computed at the ROCBS-QB3 level. Rate constants were calculated using transition state theory using the rigid rotor - harmonic oscillator approximation and considering the possible degeneration of internal motions in torsional rotations. The thermodynamic analysis indicated that the Ga gas phase species formed in the highest concentration at the standard GaN deposition temperature (1300 K) is GaNH2, followed by GaH and Ga. The diatomic GaN gas phase species, often considered to be the main precursor to the film growth, is predicted to be unstable with respect to GaNH2. Among the gas phase species containing two Ga atoms, the most stable are GaNHGaH(NH2)(3), GaNHGaH2(NH2)(2), and GaNHGa(NH2)(4), thus indicating that the substitution of the methyl groups of the precursor with H or amino groups is thermodynamically favored. Several kinetic routes leading to the formation of these species were examined. It was found that the condensation of Ga(R1)(x)(R2)(3-x) species, with R1 and R2 being either CH3, NH2, or H, is a fast process, characterized by the formation of a precursor state whose decomposition to products requires overcoming submerged energy barriers. It is suggested that these species play a key role in the formation of the first GaN nuclei, whose successive growth leads to the formation of GaN powders. A kinetic analysis performed using a fluid dynamic model allowed us to identify the main reactive routes of this complex system.
机译:这项工作旨在报告和讨论旨在确定GaN MOVPE期间主要的气相化学活性的系统研究结果。进行了这项研究,以开发一个热力学数据库,其中包括最稳定的GaN气相物种和可以有效描述其相互转化动力学的气相机理。结合密度泛函理论和从头算例,计算了热力学数据和动力学机理。在M062X / 6-311 + G(d,p)能级下确定反应物的结构和振动频率以及过渡态,而在ROCBS-QB3能级下计算能量。使用过渡状态理论,使用刚性转子​​-谐波振荡器近似并考虑扭转旋转中内部运动的可能退化,来计算速率常数。热力学分析表明,在标准GaN沉积温度(1300 K)下,浓度最高的Ga气相物种为GaNH2,其次为GaH和Ga。双原子GaN气相物种通常被认为是主要的前驱体。对于GaNH 2,膜生长预计是不稳定的。在包含两个Ga原子的气相物质中,最稳定的是GaNHGaH(NH2)(3),GaNHGaH2(NH2)(2)和GaNHGa(NH2)(4),因此表明甲基的甲基被取代。具有H或氨基的前体在热力学上是有利的。研究了导致这些物种形成的几种动力学途径。发现Ga(R1)(x)(R2)(3-x)物种的缩合(R1和R2为CH3,NH2或H)是一个快速过程,其特征是形成前体态其产品分解需要克服淹没的能源壁垒。建议这些物质在第一个GaN核的形成中起关键作用,其连续生长导致GaN粉的形成。使用流体动力学模型进行的动力学分析使我们能够确定该复杂系统的主要反应路线。

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