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首页> 外文期刊>The Journal of Chemical Physics >Wetting-layer formation mechanisms of surface-directed phase separation under different quench depths with off-critical compositions in polymer binary mixture
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Wetting-layer formation mechanisms of surface-directed phase separation under different quench depths with off-critical compositions in polymer binary mixture

机译:聚合物二元混合物中非关键组成的不同猝灭深度下表面定向相分离的润湿层形成机理

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摘要

Focusing on the off-critical condition,the quench depth dependence of surface-directed phase separation in the polymer binary mixture is numerically investigated by combination of the Cahn-Hilliard-Cook theory and the Flory-Huggins-de Gennes theory.Two distinct situations,i.e.,for the wetting,the minority component is preferred by the surface and the majority component is preferred by the surface,are discussed in detail.The simulated results show that the formation mechanism of the wetting layer is affected by both the quench depth and the off-critical extent.Moreover,a diagram,illustrating the formation mechanisms of the wetting layer with various quench depths and compositions,is obtained on the basis of the simulated results.It is found that,when the minority component is preferred by the surface,the growth of the wetting layer can exhibit pure diffusion limited growth law,logarithmic growth law,and Lifshitz-Slyozov growth law.However,when the majority component is preferred by the surface,the wetting layer always grows logarithmically,regardless of the quench depth and the off-critical extent.It is interesting that the surface-induced nucleation can be observed in this case.The simulated results demonstrate that the surface-induced nucleation only occurs below a certain value of the quench depth,and a detailed range about it is calculated and indicated.Furthermore,the formation mechanisms of the wetting layer are theoretically analyzed in depth by the chemical potential gradient.
机译:针对非临界条件,结合Cahn-Hilliard-Cook理论和Flory-Huggins-de Gennes理论,对聚合物二元混合物中表面定向相分离的淬火深度依赖性进行了数值研究。即,对于润湿,详细讨论了少数组分优先于表面,主要组分优先于表面的情况。仿真结果表明,润湿层的形成机理受淬火深度和淬火深度的影响。此外,根据模拟结果,获得了说明各种淬火深度和成分的润湿层形成机理的示意图。发现,当少数组分优先用于表面时,润湿层的生长可以表现出纯扩散限制生长定律,对数生长定律以及Lifshitz-Slyozov生长定律。表面,无论淬火深度和非临界程度如何,润湿层始终呈对数增长。有趣的是,在这种情况下可以观察到表面诱导的形核。模拟结果表明,表面诱导的形核仅在以下情况下发生确定并确定了具体的淬火深度范围。此外,通过化学势梯度从理论上深入分析了润湿层的形成机理。

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