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首页> 外文期刊>The Journal of Chemical Physics >Second-harmonic generation from chemically modified Ge(111)interfaces
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Second-harmonic generation from chemically modified Ge(111)interfaces

机译:化学修饰的Ge(111)界面的二次谐波生成

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摘要

Second-harmonic generation (SHG)was used to investigate chemically modified surfaces of Ge(111).Chemical modification was achieved by wet-chemical covalent binding of decyl and sulfur directly to the Ge interface after oxide stripping.Chemical modification of the interface substntially changes the second harmonic response.The decyl and sulfur terminations are stable in ambient during several weeks,as judged by SHG and XPS measurements.The SHG rotational anisotropy patterns were anslyzed to estimate the relative values of the nonliear susceptibilities describing the surface and bulk response.THe choice of fundamental/SHG polarization combinations for accessing various nonliear coefficients is presented.The factors affecting the relative values of the surface-to-bulk contributions to SHG and their changes upon chemical modification of the surface are discussed.In particular,it was found that the higher the electronegativity of chemically attached species,the higher the contribution of the surface-originating nonliear terms to the overall response.Also,it was found that the relative contribution of surface versus bulk to SHG is different ofr different polarization combinations:the surface contribution to the p-in/p-out response is the greatest.
机译:二次谐波(SHG)用于研究Ge(111)的化学修饰表面。化学修饰是通过癸烷和硫的湿化学共价键直接结合到氧化物剥离后的Ge界面上来实现的。二次谐波响应。通过SHG和XPS测量判断,癸基和硫的封端在几周内在环境中稳定。分析了SHG旋转各向异性模式,以估计描述表面和整体响应的非线性磁化率的相对值。介绍了基本/ SHG极化组合的选择,以获取各种非线性系数。讨论了影响表面-本体对SHG贡献的相对值的因素及其在表面化学修饰后的变化。特别是,发现化学附着物种的电负性越高,th的贡献就越大此外,还发现在不同的极化组合中,表面与体积对SHG的相对贡献是不同的:表面对p-in / p-out响应的贡献最大。

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