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首页> 外文期刊>Physical Review, B. Condensed Matter >Stable interface dynamics for copper electrodeposition in the presence of organic additives: Evidence for a gas-like surface state of the organic adsorbate
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Stable interface dynamics for copper electrodeposition in the presence of organic additives: Evidence for a gas-like surface state of the organic adsorbate

机译:在有机添加剂存在下,用于铜电沉积的稳定界面动力学:有机被吸附物呈气态表面状态的证据

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The interface dynamics of metal electrodeposits in the presence of organic additives is followed in two-dimensional glass cells. Stable Cu interfaces are formed at intermediate thiourea concentrations when a critical, but small surface coverage of thiourea (theta) is reached. For theta values corresponding to a close-packed adsorbate, the interface again becomes unstable because Cu growth takes place at defective sites in the adsorbed layer. The ability of additive molecules to suppress unstable growth is related to the formation of a diluted two-dimensional gas-like surface state preferentially adsorbed at protrusions. Protrusions are more efficient for capturing the additive than valleys, as additive molecules arrive at the growing deposit under diffusion control from the solution. [References: 22]
机译:在二维玻璃池中,跟踪有机添加剂存在下金属电沉积的界面动力学。当达到临界但很小的硫脲表面覆盖率时,在中等硫脲浓度下会形成稳定的Cu界面。对于对应于密堆积的吸附物的θ值,由于Cu生长发生在吸附层的缺陷部位,所以界面再次变得不稳定。添加剂分子抑制不稳定生长的能力与优先吸附在突起上的稀释的二维气态表面状态的形成有关。突起物比谷类更有效地捕获添加剂,因为添加剂分子在溶液的扩散控制下到达生长的沉积物。 [参考:22]

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