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首页> 外文期刊>Synthetic Metals >Highly efficient synthesis of thieno[3,4-b]thiophene derivatives and (opto)electrochemical properties of new low bandgap con-jugated polymers
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Highly efficient synthesis of thieno[3,4-b]thiophene derivatives and (opto)electrochemical properties of new low bandgap con-jugated polymers

机译:噻吩并[3,4-b]噻吩衍生物的高效合成和新型低带隙共轭聚合物的(光)电化学性能

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摘要

Various thieno[3,4-b]thiophene derivatives functionalized by n-octyl, 4-tert-butylphenyl, 4-nbutylphenyl, and 4-n-pentylphenyl were synthesized in a concise and efficient way. Previously reported synthetic processes were modified to produce target molecules in relatively high yields. Electrochemical and optical properties of polymers were examined by cyclic voltammetry and Vis-NIR spectrophotometry. The bandgap of electrochemically prepared polymers varied with substituents, ranging from 0.91 eV to 0.98 eV. While HOMO of conjugated polymers was raised by inductive effect of alkyl substituents, the bandgap was mainly determined by resonance stabilization of phenyl substituents.
机译:以简洁有效的方式合成了各种被正辛基,4-叔丁基苯基,4-正丁基苯基和4-正戊基苯基官能化的噻吩[3,4-b]噻吩衍生物。修改了先前报道的合成方法,以相对较高的产率生产靶分子。通过循环伏安法和Vis-NIR分光光度法检查聚合物的电化学和光学性质。电化学制备的聚合物的带隙随取代基变化,范围为0.91 eV至0.98 eV。虽然共轭聚合物的HOMO是通过烷基取代基的感应作用而提高的,但是带隙主要是由苯基取代基的共振稳定化决定的。

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