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Lithium Species in Electrochemically Lithiated and Delithiated Silicon Oxycarbides

机译:电化学锂化和轻质氧化硅中的锂种类

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The work described herein deals with efforts to make a persuasive correlation between structural characteristics and electrochemical lithium storage for a silicon oxycarbide prepared from poly(methylhydrogensiloxane) and divinylben- zene. Structural characterization reveals that the silicon oxycarbide includes excess free carbon in an amorphous network. The reversibility of lithiation and delithiation in the silicon oxycarbide reaches 74% between 0.005 and 3 V relative to lithium at the first cycle but falls to only ca. 30% between 0.4 and 3 V, We found two resonances at 0 and 2.4 ppm in the ~7Li magic angle spinning nuclear magnetic resonance spectrum of the silicon oxycarbide lithiated to 0.4 V, whose contributions are 67 and 33%, respectively, and thus are in good agreement with the reversibility observed between 0.4 and 3 V. The fully lithiated silicon oxycarbide shows a single resonance at ca. 3-9 ppm, which tends to broaden at lower temperatures to -120 °C, whereas the fully delithiated silicon oxycarbide has a single resonance at 0 ppm. These results indicate that both reversible and irreversible lithium species have ionic natures. The Li K edge in electron energy loss spectroscopy does not show clearly any identified near-edge fine structures in the inner part of the silicon oxycarbide after delithiation. Near the surface, on the other hand, LiF and oxygen- and phosphorus-containing compounds were found to be the major constituents of a solid electrolyte interface (SEI) layer. Over repeated lithiation and delithiation, the SEI layer appears to become thick, which should in part trigger capacity fading.
机译:本文所述的工作涉及在由聚(甲基氢硅氧烷)和二乙烯基苯制得的碳氧化硅中使结构特征与电化学锂存储之间具有说服力的相关性。结构表征表明,碳氧化硅在非晶网络中包含过量的自由碳。在第一循环中,碳氧化硅中锂化和脱锂的可逆性相对于锂在0.005V至3V之间达到74%,但仅下降到大约0.5V。介于0.4和3 V之间的30%,我们在锂化至0.4 V的碳氧化硅的〜7Li幻角旋转核磁共振谱中发现了0和2.4 ppm处的两个谐振,其贡献分别为67%和33%,因此与在0.4至3 V之间观察到的可逆性具有很好的一致性。完全锂化的碳氧化硅在ca处显示一个共振。 3-9 ppm,在较低温度至-120°C时趋于扩展,而完全脱锂的碳氧化硅在0 ppm处具有单个共振。这些结果表明可逆和不可逆锂物质均具有离子性质。电子能量损失谱中的Li K边缘在去锂化之后未清楚地显示出在碳氧化硅内部的任何已确定的近边缘精细结构。另一方面,在表面附近,发现LiF以及含氧和磷的化合物是固体电解质界面(SEI)层的主要成分。经过反复的锂化和去锂化,SEI层似乎变厚了,这应部分触发容量衰减。

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