Time-resolved electroluminescence study of green light-emitting diode

摘要

We have performed the time-resolved photoluminescence and electroluminescence measurements at 300K using a streak camera. To investigate the carrier dynamics in InGaN QWs, time-resolved photoluminescence measurements were widely used. Electroluminescence measurement brings more direct information of the carrier dynamics of device operation, because current is directly injected for generating carriers in optoelectronic devices. The time evolution of EL spectra indicates that spatial indium fluctuations becomes significant with increasing In content in nitride based optoelectronic applications.