A New Bottom-Gated Polysilicon Thin Film Transistors with Polysilicon spacer

摘要

In this study, a new bottom-gated polysilicon thin film transistor with polysilicon spacer has been studied. Our simulation results show that the electric field near drain in the TFT with polysilicon spacer is reduced considerably compared with conventional TFT without polysilicon spacer. We found the structure with polysilicon spacer can effectively improve the impact ionization. The polysilicon spacer provides an effective way to spread the electric field out and improve the device performance. Due to the polysilicon spacer is located in the channel, the on current is maintained.