机译:新型带有多晶硅垫片的底栅多晶硅薄膜晶体管
Dept. of Electronic Engineering, Feng Chia University, 100, Wenhwa Rd., Taichung 407, Taiwan;
Dept. of Electronic Engineering, Feng Chia University, 100, Wenhwa Rd., Taichung 407, Taiwan;
Dept. of Electronic Engineering, Feng Chia University, 100, Wenhwa Rd., Taichung 407, Taiwan;
Dept. of Electrical Engineering, National Central University, 300, Jhongda Rd., Jhongli 320, Taiwan;
Dept. of Electrical Engineering, National Central University, 300, Jhongda Rd., Jhongli 320, Taiwan;
thin-film transistors; polysilicon spacer; kink effect; impact ionization; bottom gated;
机译:新型带有多晶硅垫片的底栅多晶硅薄膜晶体管
机译:新型带有多晶硅垫片的底栅多晶硅薄膜晶体管
机译:新型带有多晶硅垫片的底栅多晶硅薄膜晶体管
机译:用于多晶硅薄膜晶体管器件的受激准分子激光退火的多晶硅膜的特性,
机译:通过晶粒增强技术形成的多晶硅薄膜晶体管的建模:金属诱导的横向结晶。
机译:薄膜晶体管:喷墨打印薄膜晶体管的最新进展(Adv。Sci。6/2019)
机译:局部底部门控MOS2膜晶体管的电气性能