Polarization-resolved reflections in ordered and bunched silicon nanowire arrays

摘要

Polarization-resolved reflections from ordered and bunched silicon nanowire arrays are measured and compared. It is shown that the reflections reduce considerably in bunched nanowires for the p-polarized input while not changing considerably for the s-polarized input between the ordered and bunched nanowires. The reflection is less than 9% for the whole 230-1000 nm wavelength excitation range for the bunched nanowires in the p-polarized input. Frequency-selective reflection features are observed in the ordered nanowires. Results are explained using effective index approximation and finite difference time domain simulations.