Physical properties of indium Tin oxide films prepared by DC reactive magnetron sputtering at different oxygen pressures

摘要

Transparent conducting indium tin oxide films were prepared by reactive sputtering of metallic indium (90 at %)-tin (10 at %) alloy target using dc reactive magnetron sputtering technique at various oxygen pressures in the range 5 × 10{sup}5 - 1 × 10{sup}3 mbar on glass substrates held at a temperature of 673 K. The influence of oxygen pressure on the electrical and optical properties of the films was systematically studied. Films with low electrical resistivity of 4 × 10{sup}4 ohm-cm and high optical transmittance of 88 % was obtained at an optimum oxygen pressure of 1 × 10{sup}4 mbar.