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Computer simulation study of extrinsic defects in PbWO4 crystals

机译:PbWO4晶体外在缺陷的计算机模拟研究

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This paper presents the results of a simulation study of extrinsic defects in lead tungstate crystal. The results reveal that monovalent ions preferentially enter the Pb sites, whereas pentavalent ions preferentially occupy the W sites, and both of them will simultaneously produce oxygen vacancies to keep the charge neutrality. The solution energy of trivalent dopants is a strong function of the dopant's cation radius. They generally occupy the Pb sites, with the excessive charge mainly balanced by lead vacancies. In some cases, however, an oxygen interstitial ion might also coexist. Binding energy calculations demonstrate a strong tendency toward cluster formation of the trivalent dopant ions and the lead vacancies. The relationship between the aliovalent doping and the improvement of PbWO4 (PWO) scintillation properties are discussed. This work enables us to comprehend the doping mechanism of PWO and has predicative value. [References: 42]
机译:本文介绍了钨酸铅晶体中外在缺陷的模拟研究结果。结果表明,一价离子优先进入Pb位置,而五价离子优先占据W位置,并且它们都将同时产生氧空位以保持电荷中性。三价掺杂剂的溶液能是掺杂剂阳离子半径的强函数。它们通常占据Pb位置,而过量电荷主要由铅空位来平衡。但是,在某些情况下,氧间隙离子也可能共存。结合能的计算表明三价掺杂离子和铅空位的簇形成的强烈趋势。讨论了铝价掺杂与PbWO4(PWO)闪烁性能改善之间的关系。这项工作使我们能够理解PWO的掺杂机理,并具有预测价值。 [参考:42]

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