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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >dc electrical conduction and morphology of poly(3-octylthiophene) films
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dc electrical conduction and morphology of poly(3-octylthiophene) films

机译:聚(3-辛基噻吩)薄膜的直流电传导和形貌

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摘要

The surface morphology and electrical conductivity of poly(3-octylthiophene) (P3OT) films, in both their pristine and doped states, have been studied by scanning electron microscopy and by measuring the conductivity at room temperature and the variation of conductivity with temperature in the range 10-300 K. Pristine P3OT film exhibits a mat-type structure whereas ferric chloride doped P3OT film shows conducting domains in the range 40-80 nm. The room temperature dc conductivities of pristine and doped P3OT films are similar to 1 x 10(-8) S cm(-1) and 8.2 x 10(-4) S cm(-1), respectively. The temperature dependence of dc conductivity in the region 77-300 K, where hopping conduction dominates, is well described by Mott's three-dimensional variable range hopping transport.
机译:通过扫描电子显微镜并通过测量室温下的电导率以及电导率随温度的变化,研究了聚(3-辛基噻吩)(P3OT)膜在原始状态和掺杂状态下的表面形态和电导率。原始P3OT膜表现出垫型结构,而掺杂三氯化铁的P3OT膜表现出40-80 nm范围内的导电畴。原始和掺杂的P3OT薄膜的室温直流电导率分别类似于1 x 10(-8)S cm(-1)和8.2 x 10(-4)S cm(-1)。 Mott的三维可变范围跳变传输很好地描述了在77-300 K区域中直流电导率对温度的依赖性,在该区域中跳变传导起主要作用。

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