Indentation-induced formation of low-dimensional Si structures in KOH solution

摘要

Low-dimensional Si structures, including Si nanobelts and Si micropyramids, were formed on the surface of n-type silicon by microindentation and anisotropic etching in 30 wt% KOH solution at a temperature of 50 degrees C. The indentation was performed to create local plastic deformation and residual stresses. The residual stresses caused the formation of the Si nanobelts around the sites of indents on the surface of Si (1 1 1) and the Si micropyramids at the sites of indents on the surface of Si (1 0 0). The formation of the Si micropyramids was due to the local 'mask' created by the indentation and the residual stress around the indents. The residual hydrostatic stress at the tensile state increased the local etching rate, which resulted in a surface depression around the indents. The combination of indentation and wet etching process provides a maskless process to potentially produce low-dimensional Si structures in KOH solution at low temperatures.