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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Structural characterization and effects of annealing on the electrical properties of stacked SiOxNy/Ta2O5 ultrathin films on strained-Si0.82Ge0.18 substrates
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Structural characterization and effects of annealing on the electrical properties of stacked SiOxNy/Ta2O5 ultrathin films on strained-Si0.82Ge0.18 substrates

机译:应变Si0.82Ge0.18衬底上堆叠的SiOxNy / Ta2O5超薄膜的结构特性和退火对电性能的影响

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摘要

Stacked SiOxNy/Ta2O5 films have been deposited on strained-Si0.82Ge0.18 layers at a low temperature in a microwave plasma using NO and tantalum pentaethoxide. The chemical binding states and composition of stacked Ta2O5/SiOxNy/SiGe films have been studied by time of flight secondary ion mass spectroscopy and x-ray photoelectron spectroscopy. Effects of annealing on the electrical properties of the dielectric films have been studied using hi-h frequency capacitance-voltage, current-voltage and conductance-voltage techniques. [References: 20]
机译:在低温下,使用NO和五乙醇钽在微波等离子体中,将堆叠的SiOxNy / Ta2O5薄膜沉积在应变Si0.82Ge0.18层上。通过飞行时间二次离子质谱和X射线光电子能谱研究了堆叠的Ta2O5 / SiOxNy / SiGe薄膜的化学键合状态和组成。已经使用高频率电容-电压,电流-电压和电导-电压技术研究了退火对介电膜电性能的影响。 [参考:20]

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