...
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >The electronic structure and bonding of hydrogen near a fcc Fe stacking fault
【24h】

The electronic structure and bonding of hydrogen near a fcc Fe stacking fault

机译:fcc Fe堆垛层错附近氢的电子结构和氢键

获取原文
获取原文并翻译 | 示例
           

摘要

The atom superposition and electron delocalization molecular orbital (ASED-MO) semiempirical method is used to analyse the atomic hydrogen-Fe interaction. The face centred cubic (fcc) Fe model contains a stacking fault and as a comparison the H-fcc Fe (normal) system is also studied. The solid is represented by a cluster of 180 metallic atoms distributed in five layers. The interstitial atoms localized in different geometric positions found an energetic minimum in a zone close to octahedral interstitial holes in the stacking fault. The electronic structure shows that the H-Fe bond involves mainly the Fe 4s and 4p orbitals and the is H orbital. The Fe-Fe bond near H is destabilized, to approximately 27% of its original value. [References: 49]
机译:原子叠加和电子离域分子轨道(ASED-MO)半经验方法用于分析原子氢-铁相互作用。面心立方(fcc)Fe模型包含一个堆垛层错,作为比较,还研究了H-fcc Fe(正态)系统。固体由分布在五层中的180个金属原子簇表示。处于不同几何位置的间隙原子在堆积断层中靠近八面体间隙孔的区域中发现了一个高能最小值。电子结构表明,H-Fe键主要涉及Fe 4s和4p轨道,并且是H轨道。 H附近的Fe-Fe键不稳定,约为其原始值的27%。 [参考:49]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号