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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Impact of high interface density on ferroelectric and structural properties of PbZr0.2Ti0.8O3/PbZr0.4Ti0.6O3 epitaxial multilayers
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Impact of high interface density on ferroelectric and structural properties of PbZr0.2Ti0.8O3/PbZr0.4Ti0.6O3 epitaxial multilayers

机译:高界面密度对PbZr0.2Ti0.8O3 / PbZr0.4Ti0.6O3外延多层膜铁电和结构性能的影响

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摘要

Multilayers consisting of two tetragonal compositions PbZr0.2Ti0.8O3 and PbZr0.4Ti0.6O3 were deposited onto a SrRuO3 electrode grown on a vicinal (100) SrTiO3 substrate. It has been shown by extensive structural investigations comprising transmission electron microscopy in conventional and high resolution mode, reciprocal space mapping and piezoresponse force microscopy that with decreasing layer thickness a transition from a-domains confined to individual layers to a-domains propagating through the whole film takes place. This is caused by the formation of a common strain state of all layers which is responsible for the observed enhancement of the electrical properties. These show a maximum in the product of remanent polarization and dielectric constant at a certain density of interfaces. If the interface density becomes too high the lattice distortion accompanying each interface deteriorates the properties of the multilayer structure.
机译:将由两个四方组成的PbZr0.2Ti0.8O3和PbZr0.4Ti0.6O3组成的多层沉积到在邻近(100)SrTiO3衬底上生长的SrRuO3电极上。通过广泛的结构研究表明,包括常规和高分辨率模式下的透射电子显微镜,相互空间映射和压电响应力显微镜,随着层厚度的减小,从限制在单个层中的a域过渡到在整个膜中传播的a域。发生。这是由于所有层形成共同的应变状态所致,该应变状态负责观察到的电性能的增强。这些在一定的界面密度下在剩余极化和介电常数的乘积中显示出最大值。如果界面密度变得太高,则伴随每个界面的晶格畸变使多层结构的性能劣化。

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