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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Formation mechanism of diamond nanotips by plasma enhanced vapour processes
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Formation mechanism of diamond nanotips by plasma enhanced vapour processes

机译:等离子体增强气相法形成金刚石纳米尖端的机理

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Synthesis of diamond nanotip arrays was investigated using plasma enhanced hot filament chemical vapour deposition (HFCVD) and microwave plasma enhanced chemical vapour deposition (MPCVD) under different conditions. Well-aligned diamond nanotip arrays were synthesized on silicon wafers precoated with diamond thin films with substrates negatively biased in a plasma in the HFCVD reactor with a negative bias voltage above 300V and the operation pressure below 2 kPa. The alignment orientation of the nanotips is parallel to the electric field lines on the sample surface. All the nanotips synthesized have nanometre-size tips and micrometre-size roots. The apex angle of the nanotips is similar under the same conditions regardless of the size of the nanotips. However, only flat diamond thin films were obtained when MPCVD was used regardless of the processing conditions. The experimental results indicate that the formation of nanotips strongly depends on ion bombardment and the nanotip apex angle is determined mainly by ion bombardment conditions regardless of the size of the nanotips. An angle dependent ion sputtering mechanism was proposed to explain the formation of nanotips. Furthermore, controlled ion beam sputtering of precoated diamond thin films was conducted in an ion beam deposition system to verify the formation mechanism.
机译:使用等离子体增强的热丝化学气相沉积(HFCVD)和微波等离子体增强的化学气相沉积(MPCVD)在不同条件下研究了金刚石纳米尖端阵列的合成。在预涂有金刚石薄膜的硅片上合成了取向良好的金刚石纳米尖端阵列,在HFCVD反应器中,衬底在等离子体中被负偏压,负偏压高于300V,工作压力低于2 kPa。纳米尖端的排列方向平行于样品表面上的电场线。所有合成的纳米尖端均具有纳米级尖端和微米级根。在相同条件下,不管纳米尖端的尺寸如何,纳米尖端的顶角都相似。但是,无论处理条件如何,使用MPCVD时仅获得平坦的金刚石薄膜。实验结果表明,纳米尖端的形成在很大程度上取决于离子轰击,而纳米尖端的顶角主要由离子轰击条件决定,而与纳米尖端的大小无关。提出了角度依赖性离子溅射机理来解释纳米尖端的形成。此外,在离子束沉积系统中进行了预涂金刚石薄膜的受控离子束溅射,以验证形成机理。

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