THICKNESS PROFILES OF THIN FILMS CAUSED BY SECONDARY REACTIONS IN FLOW-TYPE ATOMIC LAYER DEPOSITION REACTORS

摘要

The secondary reaction of HCl with the growing metal oxide surface during atomic layer deposition from a metal chloride and water is investigated using model calculations. HCl released during chemisorption of a metal chloride occupies adsorption sites for the metal chloride which results in a decrease in the film thickness in the gas-flow direction. The calculation model based on the continuity equation and kinetic equations for the surface coverage is described. The dependences of the thickness profile on the reactivity of HCl and on the adsorption of the metal chloride are analysed. [References: 15]