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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >OPTICAL NMR FROM SINGLE GAAS/ALGAAS QUANTUM WELLS
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OPTICAL NMR FROM SINGLE GAAS/ALGAAS QUANTUM WELLS

机译:单GAAS / ALGAAS QUANTUM井的光学NMR

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In this work, results of detailed optical nuclear magnetic resonance (ONMR) studies of a series of five single GaAs/AlGaAs quantum wells centre-doped with beryllium are presented. Signals from As-75, Ga-69 and Ga-71 nuclei were clearly observed from single quantum wells with widths ranging from 42 to 143 Angstrom. The Al-27 resonance from the AlGaAs barrier layers was not observed, confirming that the ONMR signal originated within the individual quantum wells. De-polarization of excitonic luminescence from a 60 Angstrom wide quantum well of up to 70% was observed under conditions of adiabatic fast passage through the As-75 resonance. The signal originated from approximately 10-11 nuclei and represents an increase in sensitivity over conventional NMR of 5-6 orders of magnitude. Through studies of effects of optical power, RF power and external magnetic field on the ONMR signal, this work establishes and extends the range of experimental conditions suitable for ONMR in GaAs-based structures. [References: 12]
机译:在这项工作中,提出了对五个中心掺杂铍的单个GaAs / AlGaAs量子阱进行一系列详细的光核磁共振(ONMR)研究的结果。从宽度为42至143埃的单量子阱中清楚地观察到了来自As-75,Ga-69和Ga-71原子核的信号。没有观察到来自AlGaAs势垒层的Al-27共振,证实了ONMR信号起源于各个量子阱中。在绝热快速通过As-75共振的条件下,观察到了高达60%的60埃宽量子阱中激子发光的去极化。该信号起源于大约10-11个原子核,并且比常规NMR灵敏度提高了5-6个数量级。通过研究光功率,RF功率和外部磁场对ONMR信号的影响,这项工作建立并扩展了适用于GaAs基结构中ONMR的实验条件的范围。 [参考:12]

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