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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Electrical conduction and dielectric relaxation in semiconductor SeSm0.005
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Electrical conduction and dielectric relaxation in semiconductor SeSm0.005

机译:半导体中的导电和介电弛豫SeSm0.005

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摘要

The dc and ac conductivity of polycrystalline SeSM0.005 bulk samples have been measured under vacuum in the temperature range 363-93 K. The samples displayed dielectric dispersion in the frequency range 50 Hz-80 kHz. The calculated values of the exponent s of the function sigma = Aw(s) showed that correlated barrier hopping is the suitable model to describe the ac conduction mechanism. Calculation of the real dielectric constant (epsilon'), loss factor (epsilon") and loss tangent (tan delta) are given in the studied frequency and temperature ranges. The loss factor displayed a loss peak that gives direct evidence of the existence of a Debye relaxation type. Also, the arc shape of Cole-Cole diagrams has been used to determine and discuss the optical (epsilon(infinity)) and static (epsilon(s)) dielectric constants besides the macroscopic relaxation (tau(0)) and molecular relaxation (tau) times.
机译:已在真空下在363-93 K的温度范围内测量了多晶SeSM0.005块状样品的直流和交流电导率。这些样品在50 Hz-80 kHz的频率范围内显示出介电色散。函数sigma = Aw(s)的指数s的计算值表明,相关的势垒跳跃是描述交流传导机制的合适模型。在所研究的频率和温度范围内,给出了实际介电常数(ε'),损耗因子(epsilon“)和损耗角正切(tan delta)的计算。损耗因子显示出损耗峰,直接表明存在a Debye弛豫类型。此外,Cole-Cole图的弧形已被用于确定和讨论除宏观弛豫(tau(0))和(ε)外的光学(ε)和静态(ε)介电常数。分子弛豫(tau)次。

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