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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Striped domains in soft magnetic FeNiN thin films
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Striped domains in soft magnetic FeNiN thin films

机译:软磁性FeNiN薄膜中的条纹区域

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FeNiN thin films with good soft magnetic properties were synthesized on Si (100) substrates at 473K by RF magnetron sputtering; all the films have a thickness of around 500 nm. The dependence of phase structure and magnetic properties on nickel concentrations and RF power were systematically investigated. With increasing nickel contents from X-Ni = 5.0% to X-Ni = 65.5%, FeNiN thin films deposited at P-N2 = 10.0% turn from a main bcc alpha-( Fe, Ni) phase coexisting with. gamma'- phase to fcc gamma'-(FeNi3)(4)N phase. With the RF power larger than 160W, the samples deposited at P-N2 = 3.0% all show clear reproducible striped domains at the films' surfaces, which is explained by the high enough perpendicular anisotropy and the small stress in the film. A completely ordered structure of (FeNi) N-0.0324-phase forms at PW = 300W. The FeNiN thin films prepared at different RF power show smooth surfaces and good soft magnetic properties compared with corresponding FeN compounds. The optimum soft magnetic properties with MS of similar to 1900 emu cm(-3), H-C of similar to 1Oe are obtained at P-N2 = 3.0% and P-W = 300W at 473 K.
机译:通过射频磁控溅射在473K的Si(100)衬底上合成了具有良好软磁性能的FeNiN薄膜。所有薄膜的厚度约为500 nm。系统研究了相结构和磁性对镍浓度和射频功率的依赖性。随着镍含量从X-Ni = 5.0%增加到X-Ni = 65.5%,以P-N2 = 10.0%沉积的FeNiN薄膜从与之共存的主bccα-(Fe,Ni)相转变。 gamma'-相转变为fcc gamma'-(FeNi3)(4)N相。当RF功率大于160W时,以P-N2 = 3.0%沉积的样品在膜表面都显示出清晰的可再现条纹区域,这可以通过足够高的垂直各向异性和较小的应力来解释。 (FeNi)N-0.0324相的完全有序结构在PW = 300W时形成。与相应的FeN化合物相比,以不同的RF功率制备的FeNiN薄膜显示出光滑的表面和良好的软磁性能。 MS的最佳软磁性能类似于1900 emu cm(-3),H-C类似于1Oe在473 K下获得P-N2 = 3.0%和P-W = 300W。

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