Light-induced defect creation in a-Si : H: Metastable defects or metastable H atoms?

摘要

In hydrogenated amorphous silicon (a-Si:H) the increase of the metastable defect density is usually described by an empirical two-parameter stretched exponential (SE) dependence on the illumination time (characteristic time tau(SE) and dispersion parameter, beta). In this study, an analytic one-parameter function is obtained from a microscopic model based on the formation and trapping of light-induced metastable H atoms. A comparison of the empirical SE parameters with the microscopic metastable model shows that these parameters are closely related to the steady-state H/defect density. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 9]