Transition from amorphous insulator to amorphous semiconductor in hydrogenated carbon-germanium films - investigations in submicrometer scale

摘要

Hydrogenated carbon-germanium films prepared by plasma deposition can exist in two different electronic structures: amorphous semiconductor (a-S) and amorphous insulator (a-I). A transition from a-I to a-S is observed as a result: of monotonic change in preparation conditions. Atomic force microscopy and X-ray photoelectron spectroscopy analysis revealed a step transition from a-I to a-S in submicrometer scale with a good agreement to earlier investigated macroscopic optical and electrical properties. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 11]