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Unusual Dirac half-metallicity with intrinsic ferromagnetism in vanadium trihalide monolayers

机译:三卤化钒单层中具有固有铁磁性的异常狄拉克半金属

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The Dirac half-metallicity (H. Ishizuka et al., Phys. Rev. Lett. 2012, 109, 237207, Li et al. Phys. Rev. B: Condens. Matter Mater. Phys., 2015, 92, 201403(R)) with a gap in one spin channel but a Dirac cone in the other has been proposed and attracted considerable attention. We report these exciting properties for VCl3 and VI3 layered materials based on density functional theory combined with the self-consistently determined Hubbard U approach (DFT+U-scf). Using DFT+U-scf, the stability and electronic and magnetic structures of VCl3 and VI3 monolayers are systematically investigated. The DFT+U-scf shows that VCl3 and VI3 monolayers have intrinsic ferromagnetism and half-metallicity. Remarkably, the VCl3 and VI3 monolayers possess a rather rare half-metallic Dirac point around the Fermi level with just one spin channel. In contrast to the Dirac point in graphene, the Dirac points in VCl3 and VI3 monolayers are mainly due to the V-d electrons and consequently they show a large spin-orbital coupling induced gaps of about 29 meV and 12 meV for VCl3 and VI3 monolayers, respectively. The Monte Carlo simulations based on the Ising model demonstrate that the Curie temperatures of VCl3 and VI3 sheets are only 80 K and 98 K, respectively. However, the Curie temperature can be increased up to room temperature by carrier doping. The feasibility of an exfoliation from VCl3 and VI3 layered bulk phases is confirmed due to the small cleavage energies. Our results greatly broaden the family of potential 2D Dirac materials. The calculated properties of VCl3 and VI3 monolayers show that these materials have great application potential, opening the way towards the development of high-performance electronic devices.
机译:狄拉克半金属性(H.Ishizuka等人,Phys.Rev.Lett.2012,109,237207,Li等人Phys.Rev.B:Condens.Matter Mater.Phys。,2015,92,201403(R ))在一个旋转通道中有一个缝隙,但在另一个旋转通道中有一个狄拉克锥,这已引起人们的关注。我们基于密度泛函理论与自洽确定的Hubbard U方法(DFT + U-scf)相结合,报告了VCl3和VI3层状材料的这些令人兴奋的特性。使用DFT + U-scf,系统地研究了VCl3和VI3单层的稳定性以及电子和磁性结构。 DFT + U-scf表明,VCl3和VI3单层具有固有的铁磁性和半金属性。值得注意的是,VCl3和VI3单层在费米能级附近仅有一个自旋通道,具有相当罕见的半金属狄拉克点。与石墨烯中的狄拉克点相反,VCl3和VI3单层中的狄拉克点主要归因于Vd电子,因此,它们对VCl3和VI3单层分别显示出约29 meV和12 meV的大自旋-轨道耦合诱导间隙。 。基于Ising模型的蒙特卡洛模拟表明,VCl3和VI3板的居里温度分别仅为80 K和98K。但是,通过载流子掺杂,居里温度可以升高到室温。由于裂解能小,证实了从VCl3和VI3层状本体剥离的可行性。我们的结果大大拓宽了潜在的2D Dirac材料系列。 VCl3和VI3单层的计算性能表明,这些材料具有巨大的应用潜力,为高性能电子设备的开发开辟了道路。

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