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Electrophoretic deposition of Ca2Nb3O10- nanosheets synthesized by soft-chemical exfoliation

机译:软化剥落合成的Ca2Nb3O10-纳米片的电泳沉积

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摘要

Ca2Nb3O10- (CNO-) nanosheets exfoliated from a KCa2Nb3O10 ceramic were deposited on a Pt/Ti/SiO2/Si substrate at room temperature (RT) using the electrophoresis method, and subsequently annealed at various temperatures to remove organic defects. The inter-planar distance of the (001) plane of the CNO film deposited at RT was large (1.68 nm). This distance gradually decreased to 1.44 nm when the annealing temperature was increased to 600 degrees C due to the removal of organic defects. For CNO films annealed at temperatures higher than 600 degrees C, a CaNb2O6 secondary phase was formed, indicating that annealing should be conducted at 600 degrees C to obtain a homogeneous CNO film. Moreover, the CNO film annealed at 600 degrees C showed a large epsilon(r) value of 65 with a low tan delta of 0.01 at 1.0 MHz. This film also exhibited a high breakdown electric field of 0.43 MV cm(-1) and a very low leakage current density of 3 x 10(-8) A cm(-2) at 0.4 MV cm(-1).
机译:从KCa2Nb3O10陶瓷剥离的Ca2Nb3O10-(CNO-)纳米片在室温(RT)下使用电泳方法沉积在Pt / Ti / SiO2 / Si基板上,随后在各种温度下退火以去除有机缺陷。在RT下沉积的CNO膜的(001)面的平面间距大(1.68nm)。当退火温度由于去除有机缺陷而增加到600摄氏度时,该距离逐渐减小到1.44 nm。对于在高于600摄氏度的温度下退火的CNO薄膜,形成了CaNb2O6二次相,表明应在600摄氏度进行退火以获得均匀的CNO薄膜。此外,在600摄氏度退火的CNO膜在1.0 MHz时显示出65的大ε值,tanδ较低,为0.01。该膜还表现出0.43 MV cm(-1)的高击穿电场和0.4 MV cm(-1)时的3 x 10(-8)A cm(-2)的极低泄漏电流密度。

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