Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors

摘要

Oxygen-free and low resistivity nickel (Ni) thin films are successfully prepared by plasma-assisted atomic layer deposition using nickelocene (NiCp2) as a metal precursor and ammonia (NH3) as a reactant. The properties of the deposited films are characterized by means of X-ray photoelectron spectroscopy, X-ray diffraction, ultraviolet photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy and four-point-probe measurements. The results indicate that the as-deposited films are Ni-dominated materials with small quantities of C and N, containing Ni-Ni, Ni-C, Ni-N, C-N and C-C bonds. Moreover, the films also exhibit excellent conformatity on Si nano-pillars with an aspect ratio of similar to 13. As the deposition temperature increases from 160 to 280 degrees C, the film resistivity reduces from similar to 127 to similar to 71 mu Omega cm, which is related to the gradually enhanced Ni3C phase in the films. However, the work function of the film shows a weak dependence on the deposition temperature, increasing from 4.003 to 4.046 eV. After being annealed at 400 degrees C in the forming gas (N-2/4%-H-2), the resistivity is reduced significantly down to 11.8 mu Omega cm, and the work function increases up to 4.136 eV. These are ascribed to an increase in the purity of the films, as demonstrated by the disappearance of N and the loss of C in the post-annealed films. Such a preparation technique of high quality Ni nano-films is very promising for advanced integrated circuits.