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Nonvolatile memories using the electrets of conjugated rod-coil block copolymer and its nanocomposite with single wall carbon nanotubes

机译:使用共轭杆-线圈嵌段共聚物驻极体及其单壁碳纳米管纳米复合材料的非易失性存储器

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摘要

We report high performance pentacene based organic field-effect transistor (OFET) memory devices using the electrets of conjugated rod-coil block copolymers, poly[2,7-(9,9-dihexylfluorene)]-block-poly(stearyl acrylate) (PF-b-PSA) and their nanocomposites with single-wall carbon nanotubes (SWCNT). The self-assembled PF-b-PSA electret, with the PF nanorods covered by the crystalline PSA block, exhibited a distinct hole-trapping capability due to the high electrical field generated in the confined dimension of the nanorods. Thus, it could effectively reduce the current leakage and stabilize data retention with a large memory window (35.8 V) and a high ON/OFF ratio over 10(4) s. Furthermore, the memory window of the device was further improved to 49.2 V by wrapping well-dispersed single-wall carbon nanotubes (SWCNT) in PF-b-PSA. The bundles of PF nanorods along the SWCNT effectively capture electrons and maintain retention characteristics similar to that of the PF-b-PSA device. This study demonstrated that the self-assembled conjugated rod-coil block copolymers and their nanocomposites could act as charge-storage electrets for high performance OFET memory devices through the precise morphology control.
机译:我们报告了高性能的并五苯基有机场效应晶体管(OFET)存储设备,使用共轭棒-线圈嵌段共聚物,聚[2,7-(9,9-二己基芴)]-嵌段-聚(丙烯酸硬脂酯)的驻极体PF-b-PSA)及其具有单壁碳纳米管(SWCNT)的纳米复合材料。自组装的PF-b-PSA驻极体,其PF纳米棒被结晶的PSA块覆盖,由于在纳米棒的有限尺寸中产生了高电场,因此具有独特的空穴捕获能力。因此,它可以在10(4)s内的大存储窗口(35.8 V)和高ON / OFF比的情况下有效减少电流泄漏并稳定数据保持。此外,通过将分散良好的单壁碳纳米管(SWCNT)包裹在PF-b-PSA中,器件的存储窗口进一步提高至49.2V。沿着SWCNT的PF纳米棒束有效捕获电子并保持与PF-b-PSA器件相似的保留特性。这项研究表明,自组装的共轭棒-线圈嵌段共聚物及其纳米复合材料可以通过精确的形貌控制,充当高性能OFET存储设备的电荷存储驻极体。

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