首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Poly(3-butylthiophene) nanowires inducing crystallization of poly(3-hexylthiophene) for enhanced photovoltaic performance
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Poly(3-butylthiophene) nanowires inducing crystallization of poly(3-hexylthiophene) for enhanced photovoltaic performance

机译:聚(3-丁基噻吩)纳米线诱导聚(3-己基噻吩)结晶,以增强光伏性能

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摘要

Poly(3-butylthiophene) nanowires (P3BT-nws) were incorporated into poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) to modulate the morphology of the active layer for enhanced photovoltaic performance. The P3BT-nws were found to induce the crystallization of P3HT as revealed by X-ray diffraction (XRD) and differential scanning calorimetry (DSC). Furthermore, the existence of P3BT-nws facilitated the aggregation of PCBM molecules into larger clusters as revealed by grazing-incidence small angle X-ray scattering (GISAXS). The power conversion efficiency of the ternary blend device could reach the highest value of 4.2% at a P3BT-nw weight percentage of 7 wt%, in comparison with the pristine P3HT: PCBM system of 3.0%. The improved performance should be associated with the enhanced hole and electron mobilities, due to the formation of interconnected pathways along the crystallites of P3HT and P3BT-nws for efficient long-range charge transport.
机译:将聚(3-丁基噻吩)纳米线(P3BT-nws)掺入到聚(3-己基噻吩)(P3HT)和[6,6]-苯基-C61-丁酸甲酯(PCBM)中,以调节活性层的形态增强光伏性能。如X射线衍射(XRD)和差示扫描量热法(DSC)所揭示的,发现P3BT-nws诱导P3HT的结晶。此外,P3BT-nws的存在促进了PCBM分子聚集成更大的簇,如掠入射小角X射线散射(GISAXS)所示。与原始的P3HT:PCBM系统的3.0%相比,三元共混设备的功率转换效率在P3BT-nw重量百分比为7 wt%时可以达到4.2%的最高值。由于沿着P3HT和P3BT-nws的微晶形成了相互连接的通道,从而实现了有效的长距离电荷传输,因此性能的提高应与空穴和电子迁移率的提高有关。

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