Direct growth of graphene nanopatches on graphene sheets for highly conductive thin film applications

摘要

Graphene nanopatches (GNs) on graphene films grown by chemical vapor deposition (CVD) were synthesized by Ni nanoparticle assembly and subsequent CVD growth to enhance their electrical conductivity. As a result, the sheet resistance of the hexagonally shaped GN-assembled graphene films decreased from 681.7 + 11.2 to 527.2 + 47.0 Omega sq(-1) with 97.9% transparency. This improvement in electrical conductivity was the result of p-type doping of the GNs on graphene films and the generation of additional charge carrier conducting paths to diminish defect scattering, which was a result of the enhanced extracted-hole mobility of the GN-assembled graphene films.