The DNA strand assisted conductive filament mechanism for improved resistive switching memory

摘要

Over the next few years, it is expected that resistive random access memory (RRAM) will be developed as promising non-volatile memory owing to its advantages of simple structure and high storage density. Thus there is a need for new methods to assemble multifunctional materials for resistive switching memory devices. In this work, we assemble CuO and Al nanoparticles into CuO-DNA-Al nanocomposites, where DNA strands bridge CuO nanoparticles and Al nanoparticles, by a DNA-directed assembly procedure, and investigate their memory behaviors. These CuO-DNA-Al nanocomposites present outstanding improved resistive switching memory behaviors in comparison with physically mixed CuO-Al nanocomposites. Based on the superior memory characteristics of the Au/CuO-DNA-Al/Au/Si device, a model concerning the formation and rupture of the nanoscale DNA strand assisted conductive filament mechanism is therefore suggested to explain the memory behaviors. This work opens up a new route for exploring the multifunctional materials and their applications in nonvolatile RRAM.