N-Alkyl functionalized barbituric and thiobarbituric acid bithiophene derivatives for vacuum deposited n-channel OFETs

摘要

A family of barbituric and thiobarbituric acid end capped small molecule semiconductors were synthesized, characterized and shown to exhibit n-channel organic thin film transistor properties. By changing the N-alkyl substituent from methyl to ethyl, a dramatic increase in electron mobilities was observed with values nearing 0.3 cm~2 V~(-1) s~(-1).