Vertically Integrated Logic Circuits Constructed Using ZnO-Nanowire-Based Field-Effect Transistors on Plastic Substrates

摘要

ZnO-nanowire-based logic circuits were constructed by the vertical integration of multilayered field-effect transistors (FETs) on plastic substrates. ZnO nanowires with an average diameter of ～100 nm were synthesized by thermal chemical vapor deposition for use as the channel material in FETs. The ZnO-based FETs exhibited a high I_(ON)/I_(OFF) of > 10~6, with the characteristic of n-type depletion modes. For vertically integrated logic circuits, three multilayer FETs were sequentially prepared. The stacked FETs were connected in series via electrodes, and C-PVPs were used for the layer-isolation material. The NOT and NAND gates exhibited large logic-swing values of ～93%. These results demonstrate the feasibility of three dimensional flexible logic circuits.