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首页> 外文期刊>Journal of nanoscience and nanotechnology >Charge influence and growth mechanism of ZnO nanorods
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Charge influence and growth mechanism of ZnO nanorods

机译:ZnO纳米棒的电荷影响及其生长机理

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摘要

We demonstrate the influence of charges near the substrate surface on vertically aligned ZnO nanorod growth. ZnO nanorods were fabricated on n-type GaN with and without H+ treatments by catalyst-free metal-organic chemical vapor deposition. The ZnO nanorods grown on n-GaN films were vertically well-aligned and had a well-ordered wurtzite structure. However, the ZnO did not form into nanorods and the crystal quality was very degraded as they were deposited on the H+ treated n-GaN films. The charge influence was also observed in the ZnO nanorod growth on sapphire substrates. These results implied that the charges near the substrate surface dominantly affected on the crystallization and formation of ZnO nanorods.
机译:我们证明了在衬底表面附近的电荷对垂直排列的ZnO纳米棒生长的影响。 ZnO纳米棒是通过无催化剂的金属有机化学气相沉积在经过和不经过H +处理的n型GaN上制成的。在n-GaN膜上生长的ZnO纳米棒在垂直方向上排列良好,并具有良好的纤锌矿结构。但是,ZnO并未形成纳米棒,并且当它们沉积在经过H +处理的n-GaN膜上时,其晶体质量会大大降低。在蓝宝石衬底上的ZnO纳米棒生长中也观察到了电荷影响。这些结果表明,衬底表面附近的电荷主要影响ZnO纳米棒的结晶和形成。

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