Using a hard dead space impact ionization model, the dependence of breakdown probabilities on overbias ratio in single photon avalanche diodes is investigated theoretically in a variety of semiconductor materials for the simple case of constant electric field, that is, in a p~+-i-n~+ diode structure. By using avalanche widths of 2 μm, the effects of dead space are minimized so that the breakdown probability results are determined primarily by the enabled ionization coefficients of the materials. The results illustrate how the slope of breakdown probability with overbias ratio is affected by the enabled ionization coefficients ratio and by the field dependences of ionization coefficients, which should be taken into account when choosing semiconductor materials for single photon avalanche diodes.
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