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首页> 外文期刊>Journal of Korean Institute of Metal and Materials >Fabrication and Evaluation Properties of Titanium Sintered-body for a Sputtering Target by Spark Plasma Sintering Process
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Fabrication and Evaluation Properties of Titanium Sintered-body for a Sputtering Target by Spark Plasma Sintering Process

机译:放电等离子体烧结靶用钛烧结体的制备与评价性能

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摘要

The Spark Plasma Sintering(SPS) method offers a means of fabricating a sintered-body having high density without grain growth through short sintering time and a one-step process. A titanium compact having high density and purity was fabricated by the SPS process. It can be used to fabricate a Ti sputtering target with controlled parameters such as sintering temperature, heating rate, and pressure to establish the optimized processingconditions. The compact/target(?) has a diameter of 0150×6.35 mm. The density, purity, phase transformation, and microstructure of the Ti compact were analyzed by Archimedes, ICP, XRD and FE-SEM. A Ti thin-film fabricated on a Si/SiO_2 substrate by a sputtering device (SRN-100) was analyzed by XRD, TEM, and SIMS. Density and grain size were up to 99% and below 40 urn, respectively. The specific resistivity of the optimized Ti target was 8.63 × 10~(-6) ? - cm.
机译:火花等离子体烧结(SPS)方法提供了一种通过短的烧结时间和一步法制造具有高密度而没有晶粒生长的烧结体的方法。通过SPS工艺制造具有高密度和纯度的钛压块。它可用于制造具有受控参数(例如烧结温度,加热速率和压力)的Ti溅射靶材,以建立优化的加工条件。压块/靶的直径为0150×6.35mm。用阿基米德,ICP,XRD和FE-SEM分析了钛合金的密度,纯度,相变和微观结构。通过XRD,TEM和SIMS分析了通过溅射装置(SRN-100)在Si / SiO_2衬底上制造的Ti薄膜。密度和晶粒度分别高达99%和低于40微米。优化后的Ti靶的比电阻为8.63×10〜(-6)Ω。 - 厘米。

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