Effect of Hydrogen Addition on Surface Structure and Residual Stress of Hexagonal Boron Nitride Thin Films

摘要

It is demonstrated that the effect of hydrogen addition on surface structure and residual stress of hexagonal boron nitride(hBN) thin film deposited by UBM(unbalanced magnetron) sputtering method. The incorporated Ar atoms induced compressive residual stress in the hBN film, whose magnitude appeared to be proportional to the Ar concentration. The hydrogen addition during deposition of BN films leads to a partial transformation of sp~2 bonds into sp~3 bonds on the surface of hBN and this surface structure interrupts the penetration of Ar atoms. In the result, the residual stress of hBN thin film which transferred from sp~2 to sp~3 bonding state due to the hydrogen addition decreases.