Damage-Free Post-CMP Cleaning Solution for Low-k Fluorocarbonon Advanced Interconnects

摘要

As technology node progressing, ultra low-k film has been implemented to reduce RC delay inLSI circuit. A fluorocarbon (CFx) film is proposed as foreground ultra low-k film because ofnon-porous structure [1]. Although CF" film is expected to be stable for its structure advantage,damage-less process is anticipated to avoid dielectric constants change in subsequence process steps[2]. CMP and post CMP process are concerned to bring damage on devices, so the effect of post CMPcleaning solutions on CF" structure and electric property is evaluated.