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首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena >Morphological evolution of intragranuiar void under the thermal-stress gradient generated by the steady state heat flow in encapsulated metallic films: Special reference to flip chip solder joints
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Morphological evolution of intragranuiar void under the thermal-stress gradient generated by the steady state heat flow in encapsulated metallic films: Special reference to flip chip solder joints

机译:封装的金属膜中稳态热流产生的热应力梯度作用下,晶内空隙的形貌演化:倒装焊点的特殊参考

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摘要

The morphological evolution of intragranuiar voids induced by the surface drift-diffusion under the action of capillary forces, electromigration (EM) forces, and thermal stress gradients (TSG) associated with steady state heat flow is investigated in passivated metallic thin films via computer simulation using the front-tracking method,. As far as the device reliability is concerned, the most critical configuration for interconnect failure occurs even when thermal stresses are low if the normalized ratio of interconnect width to void radius is less than certain range of values (which indicates the onset of heat flux crowding). This regime manifests itself by the formation of two symmetrically disposed finger shape extrusions (pitchfork shape slits) on the upper and lower shoulders of the void surface on the windward side The void growth (associated with supersaturated vacancy condensation) on the other hand inhibits anode displacement but enhances cathode and shoulder slit velocities drastically, which causes lateral spreading.
机译:在钝化金属薄膜中,通过计算机模拟研究了在稳态力流作用下,在毛细管力,电迁移(EM)力和热应力梯度(TSG)的作用下,表面漂移-扩散引起的颗粒内空隙的形态演化。前跟踪方法。就设备可靠性而言,即使互连宽度与空隙半径的归一化比值小于一定范围的值(这表明出现热通量拥挤),即使当热应力较低时,也会发生互连故障的最关键配置。 。这种状态通过在迎风侧的空隙表面的上,下肩上形成两个对称设置的手指形挤压物(干草叉状的缝隙)来体现。另一方面,空隙的生长(与过饱和的空位凝结有关)会抑制阳极移位但会显着提高阴极和肩部缝隙的速度,从而引起横向扩展。

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