首页> 外文期刊>Journal of Applied Electrochemistry >Copper-nickel codeposition as a model for mass-transfer characterization in copper-indium-selenium thin-film production
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Copper-nickel codeposition as a model for mass-transfer characterization in copper-indium-selenium thin-film production

机译:铜-镍共沉积作为铜铟硒薄膜生产中传质表征的模型

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摘要

The use of binary copper-nickel (Cu-Ni) codeposition from a complexing citrate electrolyte is proposed as a convenient model system for simple, rapid and inexpensive characterization of local mass-transfer limitations arising in the production of ternary copper-indium-selenium (CIS) thin films. Both the Cu-Ni and the CIS systems have been investigated in a small pilot cell and deposit thickness and composition distributions on a 5 x 5 cm(2) cathode have been compared. The experimental comparison confirms that the mass-transfer characteristics measured for copper deposition in the binary Cu-Ni codeposition system offer an excellent representation of the mass-transfer-limited deposition of copper and selenium in the ternary CIS system. The binary Cu-Ni system presents a number of advantages for process development, among which the possibility of operating at neutral pH and being much easier to handle, less expensive and less toxic than the CIS system. The results of the study presented here, although targeted to CIS production, may also be of use for the development of other electrodeposition processes in which one or more electro-active species are reduced under mass-transfer control.
机译:提议使用来自络合柠檬酸盐电解质的二元铜-镍(Cu-Ni)共沉积作为简便模型系统,以简单,快速和廉价地表征在生产三元铜-铟-硒( CIS)薄膜。 Cu-Ni和CIS系统均已在小型试验电池中进行了研究,并且比较了5 x 5 cm(2)阴极上的沉积厚度和成分分布。实验比较证实,在二元Cu-Ni共沉积系统中测量的铜沉积的传质特性可以很好地表示三元CIS系统中铜和硒的传质受限沉积。二元Cu-Ni系统为工艺开发带来了许多优势,其中有可能在中性pH下操作,并且比CIS系统更容易操作,更便宜,毒性更低。此处介绍的研究结果虽然针对的是CIS生产,但也可能用于开发其他电沉积工艺,其中在传质控制下可减少一种或多种电活性物质。

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